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  preliminary solid state devices, inc. sft6800 features: data sheet #: TR0005b maximum ratings symbol units value v ebo 10 volts emitter-base voltage v cbo 500 volts collector-base voltage i c 2 collector current collector-emitter voltage v ceo 400 amps volts o c w mw/ o c o c/w ?bv ceo 400v. ? fast switching. ? very low leakage. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for complementary use with sft1192. to-5 case outline: to-5 2 amp 500 volts npn transistor operating and storage temperature t j, t stg -65 to +200 6.67 150 thermal resistance, junction to case r 2 jc 15 total device dissipation @ t c =100 o c derate above 100 o c p d i b 0.5 base current amps designer's data sheet base emitter collector 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release.
solid state devices, inc. sft6800 preliminary v 400 - bv ceo collector-emitter breakdown voltage (i c = 20ma dc ) v 500 - collector-base breakdown voltage (i c = 100ua dc ) v 10 - bv ebo emitter-base breakdown voltage (i e = 20ua dc ) na - 200 i cbo collector cutoff current (v cb = 400v dc ) na - 200 i cev collector cutoff current (v ce = 400v dc , v eb = 1.5v dc ) 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 min max electrical characteristics symbol units na emitter cutoff current (v eb = 6v dc ) - i ebo 200 dc current gain* (v ce = 5v dc ) 50 40 15 500 collector-emitter saturation voltage* (i c = 500ma dc, i b = 50ma dc ) v ce(sat) mv dc h fe base-emitter saturation voltage* (i c = 500ma dc, i b = 50ma dc ) 1.0 v dc v be (sat) current gain bandwidth product (i c = 50ma dc , v ce = 10v dc, f = 20mhz) 25 - mhz ft 40 pf output capacitance (v cb = 30v dc , i e = 0a dc, f = 2.0mhz) - c ob (v cc = 330v dc , i c = 500ma dc , i b1 = i b2 = 100ma dc r b1 = r b2 = 330 s ) turn off time *pulse test: pulse width = 300us, duty cycle = 2% t (on) 700 ns t (off) 2000 ns bv cbo turn on time (i c = 50ma dc ) (i c = 500ma dc ) (i c = 1.0a dc ) - - - - - - -


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